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MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
A Ti2AlN MAX phase layered thin film electrode and oxygen getter layer for HfO2‐based two‐terminal memristors is presented. The …
Fabia Farlin Athena, Moses Nnaji, Diego Vaca, Mengkun Tian, Wolfgang Buchmaier, Khandker Akif Aabrar, Samuel Graham, Suman Datta,, Satish Kumar, Eric M Vogel
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Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array
Analog memory presents a promising solution in the face of the growing demand for energy-efficient artificial intelligence (AI) at the …
Fabia Farlin Athena, O. Fagbohungbe, N. Gong, M.J. Rasch, J. Penaloza, S.-C. Seo, A. Gasasira, P. Solomon, V. Bragaglia, S. Consiglio, H. Higuchi, C. Park, K. Brew, P. Jamison, C. Catano, I. Saraf, C. Silvestre, X. Liu, B. Khan, N. Jain, S. Mcdermott, R. Johnson, I. Estrada-raygoza, J. Li, T. Gokmen, N. Li, R. Pujari, F. Carta, H. Miyazoe, M.M. Frank, D. Koty, Q. Yang, R. Clark, K. Tapily, C. Wajda, A. Mosden, J. Shearer, A. Metz, S. Teehan, N. Saulnier, B. J. Offrein, T. Tsunomura, G. Leusink, V. Narayanan, T. Ando
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Describing the Analog Resistance Change of HfOx-based Neuromorphic Synapses using a Compact Series Trap-Assisted Tunneling and Ohmic Conduction Model
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Fabia Farlin Athena, Eric M Vogel
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ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
In this article, we propose an electrical bias technique to recover the accuracy of a degraded -based resistive random access memory …
Fabia Farlin Athena, Nanbo Gong, Ramachandran Muralidhar, Paul Solomon, Eric M Vogel, Vijay Narayanan, Takashi Ando
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Trade-off between Gradual Set and On/Off Ratio in HfOx-Based Analog Memory with a Thin SiOx Barrier Layer
HfOx-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in …
Fabia Farlin Athena, Matthew P West, Jinho Hah, Samuel Graham, Eric M Vogel
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Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
As the demand for computing applications capable of processing large datasets increases, there is a growing need for new in-memory …
Matthew P West, Georges Pavlidis, Robert H Montgomery, Fabia Farlin Athena, Muhammad S Jamil, Andrea Centrone, Samuel Graham, Eric M Vogel
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Asymmetric Resistive Switching of Bilayer HfO x/AlO y and AlO y/HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting …
Pradip Basnet, Erik Anderson, Fabia Farlin Athena, Bhaswar Chakrabarti, Matthew P. West, Eric M. Vogel
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Bias history impacts the analog resistance change of HfOx-based neuromorphic synapses
Resistive random-access memory (RRAM) devices have been widely studied for neuromorphic, in-memory computing. One of the most studied …
Matthew P West, Fabia Farlin Athena, Eric M Vogel, Samuel Graham
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Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
Moving toward the future computing and non-volatile memory, memristors have gained wide attention for their in-memory computing and …
Jinho Hah, Matthew P West, Fabia Farlin Athena, Riley Hanus, Eric M Vogel, Samuel Graham
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Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses
Hafnium oxide non-volatile memories have shown promise as an artificial synapse in neuromorphic computing architectures. However, there …
Fabia Farlin Athena, Matthew P West, Pradip Basnet, Jinho Hah, Qi Jiang, Wei-Cheng Lee, Eric M Vogel
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