Asymmetric Resistive Switching of Bilayer HfO x/AlO y and AlO y/HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching

Abstract

Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the switching performance, compared to the single oxide layer, the detailed explanation about why the switching can easily be improved for some oxides combinations is still missing. Herein, we fabricated two types of bi-layered heterostructure devices, quasi-HfOx/AlOy and AlOy/HfOx sandwiched between Au electrodes, and their electrical responses are investigated. For a deeper understanding of the switching mechanism, the performance of a HfOx only device is also considered, which serves as a control device. The role of bi-layered heterostructures is investigated using both the experimental and simulated results. Our results suggest that synergistic switching performance can be achieved with a proper combination of these materials and/or devices. These results open the avenue for designing more efficient double- or multi-layers memristor devices for an analog response.