Fabia Farlin Athena

Fabia Farlin Athena

Energy Postdoctoral Fellow

Stanford University

Hi! Welcome to my website! :)

I study unconventional materials and devices for 3D integration of memory and logic to enable energy-efficient electronics. My research has focused on back-end-of-line compatible devices using emerging materials (e.g., oxide semiconductors, adaptive oxides, van der Waals materials) to realize high-performance, low-power hardware for near-memory and in-memory computing, including experimental demonstrations of deep learning workloads on a resistive memory-based analog AI hardware platform.

I am a Stanford Energy Postdoctoral Fellow, advised by Prof. H.-S. Philip Wong and Prof. Alberto Salleo. I obtained my Ph.D. in Electrical and Computer Engineering from the Georgia Institute of Technology, advised by Prof. Eric M. Vogel.

Education

  • PhD in Electrical and Computer Engineering, 2024

    Georgia Institute of Technology

  • MS in Electrical and Computer Engineering, 2022

    Georgia Institute of Technology

  • Materials Engineering, 2019

    Purdue University

  • BSc in Materials Engineering, 2017

    Bangladesh University of Engineering and Technology

Updates

Feb 2026 - Our paper on gate dielectric engineering has been accepted to Nano Letters. [Preprint]

Jan 2026 - Our paper on interface dipole engineering for oxide semiconductor transistors has been featured in Compound Semiconductor. [link]

Dec 2025 - Preprint of our paper on channel-last GAA nanosheet oxide semiconductor transistors is available here.

Dec 2025 - Our paper on a new room temperature ferroelectric phase of indium selenide has been accepted to Advanced Science. [paper]

Dec 2025 - Our patent application on ferroelectric in-memory computing is now available here.

Nov 2025 - Our paper on GNN-guided charge transfer doping of 2D materials using functional polymers has been accepted to AI4MAT, NeurIPS 2025. [paper]

Oct 2025 - Our invited paper on interface dipole engineering of oxide semiconductor FETs has been accepted to IEEE Transactions on Electron Devices. [paper]

Jun 2025 - Our paper on interface engineering of oxide semiconductor FETs has been selected as a Technology Highlight at 2025 VLSI Technology and Circuits. [link], [paper]

Apr 2025 - Our paper on oxide semiconductor FET reliability has been accepted to 2025 DRC. [paper]

Apr 2025 - I have received the Sigma Xi Best Ph.D. Thesis Award at Georgia Tech.

Jan 2025 - I have been selected in Forbes 30 under 30 North America 2025.

Sep 2024 - Our paper on high-bandwidth complementary oxide gain cell memory have been accepted to IEDM 2024. [paper]

Experience

 
 
 
 
 
Stanford University
Energy Postdoctoral Fellow
Stanford University
2024 – Present Stanford, CA
 
 
 
 
 
Georgia Institute of Technology
IBM PhD Fellow & Graduate Research Assistant
Georgia Institute of Technology
2019 – 2024 Atlanta, GA
 
 
 
 
 
IBM T. J. Watson Research Center
Research Scientist Intern
IBM T. J. Watson Research Center
2022 – 2023 Yorktown Heights, NY

Honors and Awards

Rising Stars in MSE 2025
Rising Stars in MSE 2025
Technology Highlight Paper at 2025 Symposium on VLSI Technology and Circuits
VLSI Technology and Circuits 2025
Sigma Xi Best Ph.D. Thesis Award 2025
Georgia Institute of Technology 2025
Forbes 30 under 30 North America 2025
Forbes 2025
Energy Postdoctoral Fellowship
Stanford University 2024 – 2027
APL Machine Learning Outstanding Oral Presentation Award
Materials Research Society 2024
MRS Graduate Student Award
Materials Research Society 2023
EECS Rising Stars 2023
Rising Stars in EECS 2023
Colonel Oscar P. Cleaver Award
Georgia Insitute of Technology 2023
COE Travel Award
Georgia Insitute of Technology 2023
SGA Travel Award
Georgia Insitute of Technology 2023
Cadence Scholarship
Cadence Design Systems 2022
IBM PhD Fellowship
IBM 2022 – 2024
NextProf Nexus
University of California, Berkeley 2022
ECE PhD Fellowship
Georgia Institute of Technology 2019 – 2020
Dean’s List Award
Bangladesh University of Engineering and Technology 2013 – 2017
University Merit Scholarship
Bangladesh University of Engineering and Technology 2013 – 2017
University Technical Scholarship
Bangladesh University of Engineering and Technology 2013 – 2017

Publications

Fabia Farlin Athena, Jonathan Hartanto, Matthias Passlack, Jack C. Evans, Jimmy Qin, Didem Dede, Koustav Jana, Shuhan Liu, Tara Peña, Eric Pop, Greg Pitner, Iuliana P. Radu, Paul C. McIntyre, H.-S. Philip Wong (2026). Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories. In Nano Letters.

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Fabia Farlin Athena, Xiangjin Wu, Nathaniel S. Safron, Amy Siobhan McKeown-Green, Mauro Dossena, Jack C. Evans, Jonathan Hartanto, Yukio Cho, Donglai Zhong, Tara Peña, Paweł Czaja, Parivash Moradifar, Paul C. McIntyre, Mathieu Luisier, Yi Cui, Jennifer A. Dionne, Greg Pitner, Iuliana P. Radu, Eric Pop, Alberto Salleo, H.-S. Philip Wong (2025). Channel-last gate-all-around nanosheet oxide semiconductor transistors. Under Review arXiv preprint.

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Fabia Farlin Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel (2025). A van der Waals material exhibiting room temperature broken inversion symmetry with ferroelectricity. In Advanced Science.

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Fabia Farlin Athena, J. Kang, M. Passlack, N. Safron, D. Dede, K. Jana, B. Saini, X. Wang, S. Liu, J. Hartanto, E. Boneh, H.J.-Y. Chen, C.-H. Huang, Q. Lin, D. Zhong, K. Leitherer, P.C. McIntyre, G. Pitner, I.P. Radu, H.-S.P. Wong (2025). Multi-VT in Oxide-Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory. In IEEE Transactions on Electron Devices.

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Fabia Farlin Athena, Tara Peña, Kalee Francis Rozylowicz, Anh Tuan Hoang, Andrew J. Mannix, H.-S. Philip Wong, Eric Pop, Alberto Salleo (2025). Graph Neural Network Guided Selection of Functional Polymers for Charge Transfer Doping of 2D Materials. In AI for Accelerated Materials Design - NeurIPS 2025.

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Fabia Farlin Athena, J. Kang, M. Passlack, N. Safron, D. Dede, K. Jana, B. Saini, X. Wang, S. Liu, J. Hartanto, E. Boneh, H.J.-Y. Chen, C.-H. Huang, Q. Lin, D. Zhong, K. Leitherer, P.C. McIntyre, G. Pitner, I.P. Radu, H.-S.P. Wong (2025). Orthogonal VT Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering. In 2025 Symposium on VLSI Technology and Circuits (VLSI).

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K. Jana, J. Kang, S. Liu, Fabia Farlin Athena, C.-H. Huang, Y. Tang, H.J.-Y. Chen, B. Saini, J. Hartanto, R.K.A. Bennett, A.O.E. Persson, S. Li, K. Neilson, Y. M. Lee, K. Leitherer, K. Nomura, P.C. McIntyre, E. Pop, H.-S.P. Wong (2025). Key to Low Supply Voltage: Transition Region of Oxide Semiconductor Transistors. In 2025 Symposium on VLSI Technology and Circuits (VLSI).

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J. C. Evans, Fabia Farlin Athena, K. Jana, B. Saini, S. Liu, E. Boneh, P. C. McIntyre, H.-S. P. Wong (2025). Optimization is Key to High-Temperature Reliability in Oxide-Semiconductor FETs. In 2025 Device Research Conference (DRC).

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Fabia Farlin Athena, Takashi Ando, Paul Michael Solomon, Nanbo Gong, Guy M. Cohen (2024). Monolithic 3D integration of IL engineered FeFET array for in-memory compute. In Patent Application.

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Fabia Farlin Athena, E. Ambrosi, K. Jana, C. H. Wu, J. Hartanto, Y. M. Lee, C. C. Kuo, S. Liu, B. Saini, C. C. Wang, C. F. Hsu, G. Zeevi, X. Wang, J. Kang, E. Pop, T. Y. Lee, P. C. McIntyre, H.-S. P. Wong, X. Y. Bao (2024). First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory. In IEEE International Electron Devices Meeting (IEDM) 2024.

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Fabia Farlin Athena, Moses Nnaji, Diego Vaca, Mengkun Tian, Wolfgang Buchmaier, Khandker Akif Aabrar, Samuel Graham, Suman Datta,, Satish Kumar, Eric M Vogel (2024). MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio. In Advanced Functional Materials.

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Fabia Farlin Athena, O. Fagbohungbe, N. Gong, M.J. Rasch, J. Penaloza, S.-C. Seo, A. Gasasira, P. Solomon, V. Bragaglia, S. Consiglio, H. Higuchi, C. Park, K. Brew, P. Jamison, C. Catano, I. Saraf, C. Silvestre, X. Liu, B. Khan, N. Jain, S. Mcdermott, R. Johnson, I. Estrada-raygoza, J. Li, T. Gokmen, N. Li, R. Pujari, F. Carta, H. Miyazoe, M.M. Frank, D. Koty, Q. Yang, R. Clark, K. Tapily, C. Wajda, A. Mosden, J. Shearer, A. Metz, S. Teehan, N. Saulnier, B. J. Offrein, T. Tsunomura, G. Leusink, V. Narayanan, T. Ando (2024). Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array. In Frontiers in Electronics.

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Fabia Farlin Athena, Eric M Vogel (2023). Describing the Analog Resistance Change of HfOx-based Neuromorphic Synapses using a Compact Series Trap-Assisted Tunneling and Ohmic Conduction Model. In Applied Physics Letters.

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Fabia Farlin Athena, Nanbo Gong, Ramachandran Muralidhar, Paul Solomon, Eric M Vogel, Vijay Narayanan, Takashi Ando (2023). ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array. In IEEE Transactions on Electron Devices.

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Fabia Farlin Athena, Matthew P West, Jinho Hah, Samuel Graham, Eric M Vogel (2023). Trade-off between Gradual Set and On/Off Ratio in HfOx-Based Analog Memory with a Thin SiOx Barrier Layer. In ACS Applied Electronic Materials.

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Matthew P West, Georges Pavlidis, Robert H Montgomery, Fabia Farlin Athena, Muhammad S Jamil, Andrea Centrone, Samuel Graham, Eric M Vogel (2023). Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study. In Journal of Applied Physics.

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Pradip Basnet, Erik Anderson, Fabia Farlin Athena, Bhaswar Chakrabarti, Matthew P. West, Eric M. Vogel (2023). Asymmetric Resistive Switching of Bilayer HfO x/AlO y and AlO y/HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching. In ACS Applied Electronic Materials.

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Matthew P West, Fabia Farlin Athena, Eric M Vogel, Samuel Graham (2023). Bias history impacts the analog resistance change of HfOx-based neuromorphic synapses. In Applied Physics Letters.

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N. Gong, M.J. Rasch, S.-C. Seo, A. Gasasira, P. Solomon, V. Bragaglia, S. Consiglio, H. Higuchi, C. Park, K. Brew, P. Jamison, C. Catano, I. Saraf, Fabia Farlin Athena, C. Silvestre, X. Liu, B. Khan, N. Jain, S. Mcdermott, R. Johnson, I. Estrada-raygoza, J. Li, T. Gokmen, N. Li, R. Pujari, F. Carta, H. Miyazoe, M.M. Frank, D. Koty, Q. Yang, R. Clark, K. Tapily, C. Wajda, A. Mosden, J. Shearer, A. Metz, S. Teehan, N. Saulnier, B. J. Offrein, T. Tsunomura, G. Leusink, V. Narayanan, T. Ando (2022). Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization. In IEEE International Electron Devices Meeting (IEDM) 2022.

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Jinho Hah, Matthew P West, Fabia Farlin Athena, Riley Hanus, Eric M Vogel, Samuel Graham (2022). Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors. In Journal of Materials Science.

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Fabia Farlin Athena, Matthew P West, Pradip Basnet, Jinho Hah, Qi Jiang, Wei-Cheng Lee, Eric M Vogel (2022). Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses. In Journal of Applied Physics.

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Fabia Farlin Athena, Matthew P West, Jinho Hah, Riley Hanus, Samuel Graham, Eric M Vogel (2022). Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM. In Journal of Materials Chemistry C.

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Fabia Farlin Athena, Tilottoma Saha, Md Rafiqul Islam, MA Matin, Ahmed Sharif (2018). Size Dependent Magnetic and Optical Properties of Mn Doped Bi0. 9Ho0. 1FeO3 Nanoparticles. In IOP Conference Series Materials Science and Engineering.

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Tilottoma Saha, Fabia Farlin Athena, MA Matin, Ahmed Sharif (2018). Theoretical and Experimental Evidence of Modified Structure, Magnetism and Optical Properties in Ba and Mn Co-Substituted BiFeO3. In IOP Conference Series Materials Science and Engineering.

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Featured Media Articles

Outreach

Virtual office hours:

  • I am also hosting virtual office hours for anyone who would like my advice/thoughts on device research, PhD applications, Stanford/GT academic programs or any other topics of interest. Please schedule using this Form.

Favourite Quotes

  • “The scientific equations we seek are the poetry of nature.” –Prof. Chen Ning Yang

  • “Success is not final, failure is not fatal: it is the courage to continue that counts.” –Winston S. Churchill