Fabia Farlin Athena,
J. Kang,
M. Passlack,
N. Safron,
D. Dede,
K. Jana,
B. Saini,
X. Wang,
S. Liu,
J. Hartanto,
E. Boneh,
H.J.-Y. Chen,
C.-H. Huang,
Q. Lin,
D. Zhong,
K. Leitherer,
P.C. McIntyre,
G. Pitner,
I.P. Radu,
H.-S.P. Wong
(2025).
Multi-VT in Oxide-Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory.
In
IEEE Transactions on Electron Devices.
Fabia Farlin Athena,
Jonathan Hartanto,
Matthias Passlack,
Jack C. Evans,
Jimmy Qin, Didem Dede,
Koustav Jana,
Shuhan Liu,
Tara Peña,
Eric Pop,
Greg Pitner,
Iuliana P. Radu,
Paul C. McIntyre,
H.-S. Philip Wong
(2025).
Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories.
Under Review
(arXiv preprint).
Fabia Farlin Athena,
Cooper A Voigt,
Mengkun Tian,
Anjan Goswami,
Emily Toph,
Moses Nnaji,
Fanuel Mammo,
Brent K Wagner,
Sungho Jeon,
Wenshan Cai,
Eric M Vogel
(2025).
A van der Waals material exhibiting room temperature broken inversion symmetry with ferroelectricity.
Under Review
(arXiv preprint).
Fabia Farlin Athena,
J. Kang,
M. Passlack,
N. Safron,
D. Dede,
K. Jana,
B. Saini,
X. Wang,
S. Liu,
J. Hartanto,
E. Boneh,
H.J.-Y. Chen,
C.-H. Huang,
Q. Lin,
D. Zhong,
K. Leitherer,
P.C. McIntyre,
G. Pitner,
I.P. Radu,
H.-S.P. Wong
(2025).
Orthogonal VT Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering.
In
2025 Symposium on VLSI Technology and Circuits (VLSI).
K. Jana,
J. Kang,
S. Liu,
Fabia Farlin Athena,
C.-H. Huang,
Y. Tang,
H.J.-Y. Chen,
B. Saini,
J. Hartanto,
R.K.A. Bennett,
A.O.E. Persson,
S. Li,
K. Neilson,
Y. M. Lee,
K. Leitherer,
K. Nomura,
P.C. McIntyre,
E. Pop,
H.-S.P. Wong
(2025).
Key to Low Supply Voltage: Transition Region of Oxide Semiconductor Transistors.
In
2025 Symposium on VLSI Technology and Circuits (VLSI).
Fabia Farlin Athena,
E. Ambrosi,
K. Jana,
C. H. Wu,
J. Hartanto,
Y. M. Lee,
C. C. Kuo,
S. Liu,
B. Saini,
C. C. Wang,
C. F. Hsu,
G. Zeevi,
X. Wang,
J. Kang,
E. Pop,
T. Y. Lee,
P. C. McIntyre,
H.-S. P. Wong,
X. Y. Bao
(2024).
First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory.
In
IEEE International Electron Devices Meeting (IEDM) 2024.
Fabia Farlin Athena,
Moses Nnaji,
Diego Vaca,
Mengkun Tian,
Wolfgang Buchmaier,
Khandker Akif Aabrar,
Samuel Graham,
Suman Datta,,
Satish Kumar,
Eric M Vogel
(2024).
MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio.
In
Advanced Functional Materials.
Fabia Farlin Athena,
O. Fagbohungbe,
N. Gong,
M.J. Rasch,
J. Penaloza,
S.-C. Seo,
A. Gasasira,
P. Solomon,
V. Bragaglia,
S. Consiglio,
H. Higuchi,
C. Park,
K. Brew,
P. Jamison,
C. Catano,
I. Saraf,
C. Silvestre,
X. Liu,
B. Khan,
N. Jain,
S. Mcdermott,
R. Johnson,
I. Estrada-raygoza,
J. Li,
T. Gokmen,
N. Li,
R. Pujari,
F. Carta,
H. Miyazoe,
M.M. Frank,
D. Koty,
Q. Yang,
R. Clark,
K. Tapily,
C. Wajda,
A. Mosden,
J. Shearer,
A. Metz,
S. Teehan,
N. Saulnier,
B. J. Offrein,
T. Tsunomura,
G. Leusink,
V. Narayanan,
T. Ando
(2024).
Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array.
In
Frontiers in Electronics.
N. Gong,
M.J. Rasch,
S.-C. Seo,
A. Gasasira,
P. Solomon,
V. Bragaglia,
S. Consiglio,
H. Higuchi,
C. Park,
K. Brew,
P. Jamison,
C. Catano,
I. Saraf,
Fabia Farlin Athena,
C. Silvestre,
X. Liu,
B. Khan,
N. Jain,
S. Mcdermott,
R. Johnson,
I. Estrada-raygoza,
J. Li,
T. Gokmen,
N. Li,
R. Pujari,
F. Carta,
H. Miyazoe,
M.M. Frank,
D. Koty,
Q. Yang,
R. Clark,
K. Tapily,
C. Wajda,
A. Mosden,
J. Shearer,
A. Metz,
S. Teehan,
N. Saulnier,
B. J. Offrein,
T. Tsunomura,
G. Leusink,
V. Narayanan,
T. Ando
(2022).
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization.
In
IEEE International Electron Devices Meeting (IEDM) 2022.