Fabia Farlin Athena,
E. Ambrosi,
K. Jana,
C. H. Wu,
J. Hartanto,
Y. M. Lee,
C. C. Kuo,
S. Liu,
B. Saini,
C. C. Wang,
C. F. Hsu,
G. Zeevi,
X. Wang,
J. Kang,
E. Pop,
T. Y. Lee,
P. C. McIntyre,
H.-S. P. Wong,
X. Y. Bao
(2024).
First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory.
In
IEEE International Electron Devices Meeting (IEDM) 2024.
Fabia Farlin Athena,
Moses Nnaji,
Diego Vaca,
Mengkun Tian,
Wolfgang Buchmaier,
Khandker Akif Aabrar,
Samuel Graham,
Suman Datta,,
Satish Kumar,
Eric M Vogel
(2024).
MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio.
In
Advanced Functional Materials.
Fabia Farlin Athena,
O. Fagbohungbe,
N. Gong,
M.J. Rasch,
J. Penaloza,
S.-C. Seo,
A. Gasasira,
P. Solomon,
V. Bragaglia,
S. Consiglio,
H. Higuchi,
C. Park,
K. Brew,
P. Jamison,
C. Catano,
I. Saraf,
C. Silvestre,
X. Liu,
B. Khan,
N. Jain,
S. Mcdermott,
R. Johnson,
I. Estrada-raygoza,
J. Li,
T. Gokmen,
N. Li,
R. Pujari,
F. Carta,
H. Miyazoe,
M.M. Frank,
D. Koty,
Q. Yang,
R. Clark,
K. Tapily,
C. Wajda,
A. Mosden,
J. Shearer,
A. Metz,
S. Teehan,
N. Saulnier,
B. J. Offrein,
T. Tsunomura,
G. Leusink,
V. Narayanan,
T. Ando
(2024).
Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array.
In
Frontiers in Electronics.
N. Gong,
M.J. Rasch,
S.-C. Seo,
A. Gasasira,
P. Solomon,
V. Bragaglia,
S. Consiglio,
H. Higuchi,
C. Park,
K. Brew,
P. Jamison,
C. Catano,
I. Saraf,
Fabia Farlin Athena,
C. Silvestre,
X. Liu,
B. Khan,
N. Jain,
S. Mcdermott,
R. Johnson,
I. Estrada-raygoza,
J. Li,
T. Gokmen,
N. Li,
R. Pujari,
F. Carta,
H. Miyazoe,
M.M. Frank,
D. Koty,
Q. Yang,
R. Clark,
K. Tapily,
C. Wajda,
A. Mosden,
J. Shearer,
A. Metz,
S. Teehan,
N. Saulnier,
B. J. Offrein,
T. Tsunomura,
G. Leusink,
V. Narayanan,
T. Ando
(2022).
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization.
In
IEEE International Electron Devices Meeting (IEDM) 2022.