Fueling a Future in Low-Power AI through Nanoelectronics Innovation

Fabia Farlin Athena

Fabia Farlin Athena

Energy Postdoctoral Fellow

Stanford University

Hi! Welcome to my website! :)

As a Stanford Energy Fellow, I focus on developing emerging memory and logic technologies using oxide semiconductors and low dimensional materials for energy-efficient AI under the mentorship of Prof. H.-S. Philip Wong and Prof. Alberto Salleo.

I obtained my Ph.D. in Electrical and Computer Engineering from Georgia Tech, advised by Prof. Eric M. Vogel. My doctoral research focused on adaptive oxide-based brain-inspired analog and in-memory computing devices. By exploring optimizations at the material, device, and system levels in collaboration with IBM, I worked toward enhancing the performance and efficiency of these devices.

My overarching work bridges nanomaterials, fundamental device physics, chip fabrication, and practical system implementations to develop technologies aimed at reducing energy consumption in AI hardware.

Interests
  • Oxide Semiconductors
  • Low Dimensional Materials
  • Emerging Memories
  • Energy Efficient AI
  • Device Physics
  • Analog AI
Education
  • PhD in Electrical and Computer Engineering, May, 2024

    Georgia Institute of Technology

  • MS in Electrical and Computer Engineering, May, 2022

    Georgia Institute of Technology

  • Materials Science and Engineering, 2019

    Purdue University

  • BSc in Materials and Metallurgical Engineering, September, 2017

    Bangladesh University of Engineering and Technology

Experience

 
 
 
 
 
Stanford University
Energy Postdoctoral Fellow
2024 – Present Stanford, CA
 
 
 
 
 
Georgia Institute of Technology
IBM PhD Fellow
2022 – 2024 Atlanta, GA
 
 
 
 
 
IBM T. J. Watson Research Center
Research Scientist Intern
2023 – 2023 Yorktown Heights, NY
 
 
 
 
 
IBM T. J. Watson Research Center
Research Intern
2022 – 2022 Yorktown Heights, NY
 
 
 
 
 
Georgia Instititute of Technology
Graduate Research Assistant
2019 – 2022 Atlanta, GA
 
 
 
 
 
Purdue University
Graduate Research Assistant
2019 – 2019 West Lafayette, IN
 
 
 
 
 
Bangladesh University of Engineering and Technology
Lecturer
2018 – 2019 Dhaka, Bangladesh

Publications

(2024). Monolithic 3D integration of FeFET array for in-memory compute. .Patent approved for filing.

(2024). First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory. In IEEE International Electron Devices Meeting (IEDM) 2024.

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(2024). MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio. In Advanced Functional Materials.

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(2024). Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array. In Frontiers in Electronics.

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(2023). ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array. In IEEE Transactions on Electron Devices.

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(2023). Trade-off between Gradual Set and On/Off Ratio in HfOx-Based Analog Memory with a Thin SiOx Barrier Layer. In ACS Applied Electronic Materials.

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(2023). Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study. In Journal of Applied Physics.

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(2023). Asymmetric Resistive Switching of Bilayer HfO x/AlO y and AlO y/HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching. In ACS Applied Electronic Materials.

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(2023). Bias history impacts the analog resistance change of HfOx-based neuromorphic synapses. In Applied Physics Letters.

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(2022). Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization. In IEEE International Electron Devices Meeting (IEDM) 2022.

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(2022). Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors. In Journal of Materials Science.

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(2022). Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses. In Journal of Applied Physics.

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(2022). Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM. In Journal of Materials Chemistry C.

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(2018). Size Dependent Magnetic and Optical Properties of Mn Doped Bi0. 9Ho0. 1FeO3 Nanoparticles. In IOP Conference Series Materials Science and Engineering.

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(2018). Theoretical and Experimental Evidence of Modified Structure, Magnetism and Optical Properties in Ba and Mn Co-Substituted BiFeO3. In IOP Conference Series Materials Science and Engineering.

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Featured Media Articles

Outreach

Virtual office hours:

  • I am also hosting virtual office hours for anyone who would like my advice/thoughts on device research, PhD applications, Stanford/GT academic programs or any other topics of interest. Please schedule using this Form.

Favourite Quotes

  • “The scientific equations we seek are the poetry of nature.” –Prof. Chen Ning Yang

  • “Success is not final, failure is not fatal: it is the courage to continue that counts.” –Winston S. Churchill