(i) Addition of barrier layer in HfO_x devices - Oxygen ion dynamics influence resistance changes. Integrating a SiO_x (< 1 nm) barrier layer near the reset anode interface can control this, leading to gradual resistance changes during positive analog pulses. While the HfO_x/SiO_x devices outperform standard ones, there’s a trade-off between linearity and switching window because of a small oxide formation in the filament. The barrier layer devices, despite better linearity, have high reset current densities, necessitating further low-power synapse investigation.
(ii) Off-current reduction using ultrathin multilayered low thermally conductive materials - I posited that electrodes with low thermal conductivity could localize heat in the filament, thereby enlarging the rupture oxide area and decreasing current density. While most such materials are unsuitable as electrodes, the MAX phase uniquely combines low thermal conductivity with high electrical conductivity. Because of ultrathin multi layered structure MAX phase can confine heat and can act as a better oxygen reservoir for memristor. I fabricated memristors with MAX phase electrodes , verifying the fabrication via methods such as Raman Spectroscopy, Transmission electron microscopy, in-situ XRD. These devices displayed ultra-low reset current density, high on-off ratio, and superior endurance, emphasizing the promise of MAX phase materials in energy-efficient, high-density memory systems.