Fabia Farlin Athena

Fabia Farlin Athena

Energy Postdoctoral Fellow

Stanford University

Hi! Welcome to my website! :)

As a Stanford Energy Fellow, I focus on developing emerging memory and logic technologies using oxide semiconductors and low dimensional materials for energy-efficient AI under the mentorship of Prof. H.-S. Philip Wong and Prof. Alberto Salleo.

I obtained my Ph.D. in Electrical and Computer Engineering from Georgia Tech, advised by Prof. Eric M. Vogel. My doctoral research focused on adaptive oxide-based brain-inspired analog and in-memory computing devices. By exploring optimizations at the material, device, and system levels in collaboration with IBM, I worked toward enhancing the performance and efficiency of these devices.

My overarching work bridges nanomaterials, fundamental device physics, chip fabrication, and practical system implementations to develop technologies aimed at reducing energy consumption in AI hardware.

Interests
  • Oxide Semiconductors
  • Low Dimensional Materials
  • Emerging Memories
  • Energy Efficient AI
  • Device Physics
  • Analog AI
Education
  • PhD in Electrical and Computer Engineering, 2024

    Georgia Institute of Technology

  • MS in Electrical and Computer Engineering, 2022

    Georgia Institute of Technology

  • Materials Engineering, 2019

    Purdue University

  • BSc in Materials Engineering, 2017

    Bangladesh University of Engineering and Technology

Updates

Apr 2025 - I have received the Sigma Xi Best Ph.D. Thesis Award at Georgia Tech.

Jan 2025 - I have been selected for Forbes 30 under 30 North America 2025.

Sep 2024 - Our paper on high-bandwidth complementary oxide gain cell memory have been accepted to IEDM 2024.

Mar 2024 - I have started at Stanford University as an Energy Postdoctoral Fellow.

Feb 2024 - Our paper on MAX phase memristor has been accepted to Advanced Functional Materials.

Jan 2024 - Our paper on transfer learning on analog hardware has been accepted to Frontiers in Electronics.

Dec 2023 - I gave 3 talks at MRS Fall 2023, where I received the MRS Graduate Student Award and the APL Machine Learning Outstanding Oral Presentation Award.

Nov 2023 - I gave a talk at Electrical Engineering, Stanford University.

Oct 2023 - Our paper on compact modeling of adaptive oxide resistive memories has been accepted to Applied Physics Letters.

Aug 2023 - I have been selected for EECS Rising Stars 2023.

Jul 2023 - I gave a presentation at IBM TJ Watson Research Center.

May 2023 - I have started an internship at IBM TJ Watson Research Center.

Apr 2023 - I gave a talk at Stanford University.

Apr 2023 - I have received the Colonel Oscar P. Cleaver Award for best PhD Proposal in GT ECE.

Experience

 
 
 
 
 
Stanford University
Energy Postdoctoral Fellow
2024 – Present Stanford, CA
 
 
 
 
 
Georgia Institute of Technology
IBM PhD Fellow
2022 – 2024 Atlanta, GA
 
 
 
 
 
IBM T. J. Watson Research Center
Research Scientist Intern
2023 – 2023 Yorktown Heights, NY
 
 
 
 
 
IBM T. J. Watson Research Center
Research Intern
2022 – 2022 Yorktown Heights, NY
 
 
 
 
 
Georgia Instititute of Technology
Graduate Research Assistant
2019 – 2022 Atlanta, GA
 
 
 
 
 
Purdue University
Graduate Research Assistant
2019 – 2019 West Lafayette, IN
 
 
 
 
 
Bangladesh University of Engineering and Technology
Lecturer
2018 – 2019 Dhaka, Bangladesh

Publications

(2025). Multi-VT in Oxide-Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory. In IEEE Transactions on Electron Devices.

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(2025). Graph Neural Network Guided Selection of Functional Polymers for Charge Transfer Doping of 2D Materials. In AI for Accelerated Materials Design - NeurIPS 2025.

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(2025). Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories. Under Review (arXiv preprint).

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(2025). A van der Waals material exhibiting room temperature broken inversion symmetry with ferroelectricity. Under Review (arXiv preprint).

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(2025). Orthogonal VT Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering. In 2025 Symposium on VLSI Technology and Circuits (VLSI).

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(2025). Key to Low Supply Voltage: Transition Region of Oxide Semiconductor Transistors. In 2025 Symposium on VLSI Technology and Circuits (VLSI).

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(2025). Optimization is Key to High-Temperature Reliability in Oxide-Semiconductor FETs. In 2025 Device Research Conference (DRC).

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(2024). Monolithic 3D integration of FeFET array for in-memory compute. .Patent approved for filing.

(2024). First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory. In IEEE International Electron Devices Meeting (IEDM) 2024.

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(2024). MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio. In Advanced Functional Materials.

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(2024). Demonstration of Transfer Learning Using 14 nm Technology Analog ReRAM Array. In Frontiers in Electronics.

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(2023). ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array. In IEEE Transactions on Electron Devices.

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(2023). Trade-off between Gradual Set and On/Off Ratio in HfOx-Based Analog Memory with a Thin SiOx Barrier Layer. In ACS Applied Electronic Materials.

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(2023). Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study. In Journal of Applied Physics.

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(2023). Asymmetric Resistive Switching of Bilayer HfO x/AlO y and AlO y/HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching. In ACS Applied Electronic Materials.

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(2023). Bias history impacts the analog resistance change of HfOx-based neuromorphic synapses. In Applied Physics Letters.

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(2022). Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization. In IEEE International Electron Devices Meeting (IEDM) 2022.

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(2022). Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors. In Journal of Materials Science.

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(2022). Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses. In Journal of Applied Physics.

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(2022). Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM. In Journal of Materials Chemistry C.

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(2018). Size Dependent Magnetic and Optical Properties of Mn Doped Bi0. 9Ho0. 1FeO3 Nanoparticles. In IOP Conference Series Materials Science and Engineering.

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(2018). Theoretical and Experimental Evidence of Modified Structure, Magnetism and Optical Properties in Ba and Mn Co-Substituted BiFeO3. In IOP Conference Series Materials Science and Engineering.

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Featured Media Articles

Outreach

Virtual office hours:

  • I am also hosting virtual office hours for anyone who would like my advice/thoughts on device research, PhD applications, Stanford/GT academic programs or any other topics of interest. Please schedule using this Form.

Favourite Quotes

  • “The scientific equations we seek are the poetry of nature.” –Prof. Chen Ning Yang

  • “Success is not final, failure is not fatal: it is the courage to continue that counts.” –Winston S. Churchill