In2Se3, with its unique electronic and optical properties, can be a potential game-changer in the semiconductor arena, benefiting from its high electron mobility and bandgap tunability. To understand the electrical responses, I have been working on In2Se3 based on two and three-terminal devices. I have developed a fabrication process for three-terminal 𝛽-In2Se3 based back-gated transistors with only two-step lithography. We are currently continuing to uncover the underlying mechanisms and impact of substrate and growth conditions on the electrical properties of these devices.